GATING SYSTEMS FOR HIGH-VOLTAGE THYRISTOR VALVES

被引：9

作者：

LIPS, HP

PAULI, M

机构：

[1] BBC Brown Boveri & Co, Switzerland

来源：

IEEE TRANSACTIONS ON POWER DELIVERY | 1988年 / 3卷 / 03期

关键词：

Electronic Circuits;

D O I：

10.1109/61.193876

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The requirements on gating systems for thyristor valves used in high-voltage direct current and static VAR compensator systems are listed. Different techniques used to meet these requirements are discussed with a view on the specific service condition of the particular application and illustrated by service performance.

引用

页码：978 / 983

页数：6