OBSERVATION OF LOMER-COTTRELL LOCKS IN SIGE STRAINED LAYERS

被引:3
作者
FERRET, P [1 ]
ROBINSON, BJ [1 ]
THOMPSON, DA [1 ]
BARIBEAU, JM [1 ]
机构
[1] NATL RES COUNCIL CANADA,OTTAWA K1A 0R6,ONTARIO,CANADA
关键词
D O I
10.1063/1.103896
中图分类号
O59 [应用物理学];
学科分类号
摘要
Misfit dislocations in the SiGe system are usually not dissociated. We present the first observation of a Lomer-Cottrell lock array in a Si/Si 1-xGex/Si heterostructure (0.4<x<0.6). We describe the character of the stacking faults and the partial dislocations which form the locks.
引用
收藏
页码:2220 / 2221
页数:2
相关论文
共 11 条
[1]  
[Anonymous], 1982, THEORY DISLOCATIONS
[2]   HETEROEPITAXY OF GE ON (100) SI SUBSTRATES [J].
BARIBEAU, JM ;
JACKMAN, TE ;
MAIGNE, P ;
HOUGHTON, DC ;
DENHOFF, MW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1898-1902
[3]  
HOUGHTON DC, 1987, MATER RES SOC S P, V77, P411
[4]   VARIATION IN MISFIT DISLOCATION BEHAVIOR AS A FUNCTION OF STRAIN IN THE GESI SI SYSTEM [J].
HULL, R ;
BEAN, JC .
APPLIED PHYSICS LETTERS, 1989, 54 (10) :925-927
[5]   NUCLEATION OF MISFIT DISLOCATIONS IN STRAINED-LAYER EPITAXY IN THE GEXSI1-X/SI SYSTEM [J].
HULL, R ;
BEAN, JC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (04) :2580-2585
[6]   ONE-DIMENSIONAL SIGE SUPERLATTICE GROWN BY UHV EPITAXY [J].
KASPER, E ;
HERZOG, HJ ;
KIBBEL, H .
APPLIED PHYSICS, 1975, 8 (03) :199-205
[7]   GENERATION OF MISFIT DISLOCATIONS IN SEMICONDUCTORS [J].
MAREE, PMJ ;
BARBOUR, JC ;
VANDERVEEN, JF ;
KAVANAGH, KL ;
BULLELIEUWMA, CWT ;
VIEGERS, MPA .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (11) :4413-4420
[8]   DEFECTS ASSOCIATED WITH ACCOMMODATION OF MISFIT BETWEEN CRYSTALS [J].
MATTHEWS, JW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :126-133
[9]   HIGH-RESOLUTION ELECTRON-MICROSCOPY OF MISFIT DISLOCATIONS IN THE GAAS/SI EPITAXIAL INTERFACE [J].
OTSUKA, N ;
CHOI, C ;
NAKAMURA, Y ;
NAGAKURA, S ;
FISCHER, R ;
PENG, CK ;
MORKOC, H .
APPLIED PHYSICS LETTERS, 1986, 49 (05) :277-279
[10]   EFFECT OF THE SIGN OF MISFIT STRAIN ON THE DISLOCATION-STRUCTURE AT INTERFACES OF HETEROEPITAXIAL GAASXP1-X FILMS [J].
PETRUZZELLO, J ;
LEYS, MR .
APPLIED PHYSICS LETTERS, 1988, 53 (24) :2414-2416