PSEUDOPOTENTIAL AND K.P BAND PARAMETERS FOR GAAS, INP AND INSB

被引：10

作者：

GORCZYCA, I ^{[1
]}

PFEFFER, P ^{[1
]}

ZAWADZKI, W ^{[1
]}

机构：

[1] POLISH ACAD SCI,INST PHYS,PL-02668 WARSAW,POLAND

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 10期

关键词：

D O I：

10.1088/0268-1242/6/10/002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Matrix elements of momentum and of the spin-orbit interaction are calculated for GaAs, InP and InSb using the empirical pseudopotential method. The obtained values are shown to be in reasonable agreement with those determined from the description of various magneto-optical data by five-level k.p model. We demonstrate a necessity of employing the complete pseudopotential wave functions (including the core states) in realistic calculations of band parameters.

引用

页码：963 / 968

页数：6

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