3-PHASE GAAS SCHOTTKY-BARRIER CCD OPERATED UP TO 100-MHZ CLOCK FREQUENCY

[1] SIGNAL-PROCESSING WITH CHARGE-COUPLED-DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (02) : 108 - 125

[2] CHAN YT, 1976, 3RD P C CCD TECHN AP, P89

[3] CLARK MD, 1978 IEDM

[4] GAAS CHARGE-COUPLED-DEVICES [J]. APPLIED PHYSICS LETTERS, 1978, 32 (06) : 383 - 385

[5] DEYHIMY I, 1978, GAAS RELATED COMPOUN, P445

[6] HANSELL GL, 1979 IEDM

[7] A 2-PHASE CCD ON GAAS WITH 0.3-MU-M-WIDE ELECTRODE GAPS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1195 - 1197

[8] KELLNER W, 1977 INT EL DEV M TE, P599

[9] NEW STRUCTURES FOR CHARGE-COUPLED DEVICES [J]. PROCEEDINGS OF THE IEEE, 1972, 60 (11) : 1444 - 1445

[10] GAAS MESFET LOGIC WITH 4-GHZ CLOCK RATE [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1977, 12 (05) : 485 - 496

[1] SIGNAL-PROCESSING WITH CHARGE-COUPLED-DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (02) : 108 - 125

[2] CHAN YT, 1976, 3RD P C CCD TECHN AP, P89

[3] CLARK MD, 1978 IEDM

[4] GAAS CHARGE-COUPLED-DEVICES [J]. APPLIED PHYSICS LETTERS, 1978, 32 (06) : 383 - 385

[5] DEYHIMY I, 1978, GAAS RELATED COMPOUN, P445

[6] HANSELL GL, 1979 IEDM

[7] A 2-PHASE CCD ON GAAS WITH 0.3-MU-M-WIDE ELECTRODE GAPS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1195 - 1197

[8] KELLNER W, 1977 INT EL DEV M TE, P599

[9] NEW STRUCTURES FOR CHARGE-COUPLED DEVICES [J]. PROCEEDINGS OF THE IEEE, 1972, 60 (11) : 1444 - 1445

[10] GAAS MESFET LOGIC WITH 4-GHZ CLOCK RATE [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1977, 12 (05) : 485 - 496