EFFECT OF FRUSTRATION ON THE BAND EDGE IN AMORPHOUS-SEMICONDUCTORS

被引：8

作者：

BLACKMAN, JA ^{[1
]}

THORPE, MF ^{[1
]}

机构：

[1] MICHIGAN STATE UNIV,DEPT PHYS,E LANSING,MI 48824

来源：

PHYSICAL REVIEW B | 1981年 / 23卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.23.2871

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2871 / 2875

页数：5

共 16 条

[1] BAND-STRUCTURE OF SI III AND GE III [J].

ALBEN, R ;

WEAIRE, D ;

THORPE, MF ;

GOLDSTEIN, S .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1972, 53 (02) :545-+

[2]

BELLMAN R, 1960, INTRO MATRIX ANAL, P278

[3] MODELING STRUCTURE OF AMORPHOUS TETRAHEDRALLY COORDINATED SEMICONDUCTORS .1. [J].

CONNELL, GAN ;

TEMKIN, RJ .

PHYSICAL REVIEW B, 1974, 9 (12) :5323-5326

[4]

GOLDSTEIN S, 1974, THESIS YALE U

[5] CRYSTAL STRUCTURES OF NEW FORMS OF SILICON + GERMANIUM [J].

KASPER, JS ;

RICHARDS, SM .

ACTA CRYSTALLOGRAPHICA, 1964, 17 (06) :752-&

[6]

PAUL W, 1974, PHYSICS STRUCTURALLY, P45

[7]

SCOTT DS, 1979, ORNLCSD48 REP

[8]

SEN P, 1977, PHYS REV B, V15, P1600

[9] RELAXED CONTINUOUS RANDOM NETWORK MODELS .1. STRUCTURAL CHARACTERISTICS [J].

STEINHARDT, P ;

ALBEN, R ;

WEAIRE, D .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1974, 15 (02) :199-214

[10] PHASE-DIAGRAMS OF RANDOM ISING MAGNETS [J].

THORPE, MF ;

MCGURN, AR .

PHYSICAL REVIEW B, 1979, 20 (05) :2142-2153

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