HIGH-SENSITIVITY HALL ELEMENTS MADE FROM SI-DOPED INAS ON GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY

被引：20

作者：

IWABUCHI, T ^{[1
]}

ITO, T ^{[1
]}

YAMAMOTO, M ^{[1
]}

SAKO, K ^{[1
]}

KANAYAMA, Y ^{[1
]}

NAGASE, K ^{[1
]}

YOSHIDA, T ^{[1
]}

ICHIMORI, F ^{[1
]}

SHIBASAKI, I ^{[1
]}

机构：

[1] ASAHI CHEM IND CO LTD,FUJI,SHIZUOKA 416,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)80149-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have newly developed Hall elements consisting of Si-doped InAs thin film grown on GaAs substrate by molecular beam epitaxy (MBE). By doping Si into the layer of InAs thin films far from the InAs/GaAs interface, InAs thin films with high electron mobility are obtained and temperature dependent variations of the electron mobility and sheet resistance are much reduced. These InAs thin films were processed into Hall elements with practically useful characteristics.

引用

页码：1302 / 1306

页数：5