DESIGN CONSIDERATIONS FOR HIGH-INTENSITY SOLAR-CELLS

被引：58

作者：

DALAL, VL ^{[1
]}

MOORE, AR ^{[1
]}

机构：

[1] RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 03期

关键词：

D O I：

10.1063/1.323766

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1244 / 1251

页数：8

共 28 条

[1]

Arndt R. A., 1975, 11th IEEE Photovoltaic Specialists Conference, P40

[2]

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[4] EPITAXIAL SILICON SOLAR CELL [J].

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KRESSEL, H ;

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[5]

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[6]

DALAL VL, 1976, ENERGY STRATEGIES IN

[7] REFINED STEP-RECOVERY TECHNIQUE FOR MEASURING MINORITY CARRIER LIFETIMES AND RELATED PARAMETERS IN ASYMMETRIC P-N JUNCTION DIODES [J].

DEAN, RH ;

NUESE, CJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (03) :151-&

[8]

DEAN RH, 1975, RCA REV, V36, P324

[9] MINORITY-CARRIER DIFFUSION LENGTH AND RECOMBINATION LIFETIME IN GAAS-GE PREPARED BY LIQUID-PHASE EPITAXY [J].

ETTENBERG, M ;

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GILBERT, SL .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) :827-831

[10]

HOVEL HJ, 1973, 10TH P IEEE PHOT SPE, P25

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