NEW PHENOMENA IN JOSEPHSON SINIS JUNCTIONS

被引：117

作者：

VOLKOV, AF

机构：

[1] Institute of Radioengineering and Electronics, Russian Academy of Sciences, Moscow 103907

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 74卷 / 23期

关键词：

D O I：

10.1103/PhysRevLett.74.4730

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We analyze the dc and ac Josephson effects in SaINISb junctions in which an additional bias current flows in the N layer. The case of low temperatures and voltages (eV, TΔ) is considered in the dirty limit. We show that the critical Josephson current may change sign, and the considered SINIS junction may become a π junction if the voltage drop across the N/Sa interface exceeds a certain value (eVN>Δ/2). The ac Josephson effect may arise even if the current flows only through the N/Sa interface, whereas the current through the Sb/N interface is absent. © 1995 The American Physical Society.

引用

页码：4730 / 4733

页数：4

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