BACKSCATTERING ANALYSIS OF SI1-YCY LAYERS USING THE C-12(HE-4,HE-4)C-12 RESONANCE AT 4.265 MEV

被引：15

作者：

ENDISCH, D ^{[1
]}

OSTEN, HJ ^{[1
]}

ZAUMSEIL, P ^{[1
]}

ZINKEALLMANG, M ^{[1
]}

机构：

[1] INST SEMICOND PHYS,D-15204 FRANKFURT,GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1995年 / 100卷 / 01期

关键词：

D O I：

10.1016/0168-583X(95)00259-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Resonant backscattering of He-4 ions using the C-12(He-4,He-4)C-12 resonance at 4.265 MeV has been used to analyze C in MBE grown Si1-yCy layers and in ion implanted Si with C concentrations of the order of one at.%. With ion channeling the ratio of substitutional to interstitial C sites in the Si1-yCy layers was determined and the obtained values for the tetragonal distortion are compared with results from X-ray diffraction measurements. The measured C amount of an ion implanted sample used for calibration was in good agreement with the nominal amount, while the range distribution was about 15% shallower than predicted by TRIM calculations, Strong deviations from the Rutherford scattering cross section are observed for scattering from Si and the influence due to background from nuclear reactions with Si on the C analysis is discussed.

引用

页码：125 / 132

页数：8

共 21 条

[1] CROSS-SECTIONS FOR NON-RUTHERFORD BACKSCATTERING OF HE-4 FROM 5 LIGHT-ELEMENTS [J].