未找到相关数据
INITIAL GROWTH AND DISLOCATION ACCOMMODATION OF GAAS ON SI(100) BY MOLECULAR-BEAM EPITAXY
被引：30
作者：
TAKASUGI, H
KAWABE, M
BANDO, Y
机构：
[1] Univ of Tsukuba, Sakura-mura, Jpn, Univ of Tsukuba, Sakura-mura, Jpn
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
|
1987年
/
26卷
/
05期
关键词：
MICROSCOPIC EXAMINATION - Transmission Electron Microscopy - MOLECULAR BEAM EPITAXY - SEMICONDUCTING SILICON - SPECTROSCOPY;
AUGER ELECTRON;
D O I：
10.1143/JJAP.26.L584
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The nucleation and growth process of GaAs on Si has been studied by auger electron spectroscopy and transmission electron microscopy. At growth temperatures above 120 degree C, epitaxial growth begins with island formation, the size of which depends on the growth temperature. At low growth temperature (approximately 120 degree C) the epitaxial islands grow preferentially on Si surface terraces rather than on steps, and misfit dislocations are introduced at steps where the leading edges of growing islands come into contact with each other.
引用
收藏
页码：L584 / L586
页数：3
相关论文