HIGH-FIELD ELECTRON TRAPPING IN SIO2

[1] TRAP IONIZATION BY ELECTRON-IMPACT IN AMORPHOUS SIO2-FILMS [J]. APPLIED PHYSICS LETTERS, 1974, 24 (10) : 459 - 461

[2] THEORY AND EXPERIMENTS ON SURFACE 1/F NOISE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (02) : 273 - +

[3] GOETZBERGER A, 1966, APPL PHYS LETT, V12

[4] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &

[5] ELECTRON INJECTION AND TRAP FILLING IN INSULATING LAYERS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 36 (02): : 705 - 715

[6] CASCADE CAPTURE OF ELECTRONS IN SOLIDS [J]. PHYSICAL REVIEW, 1960, 119 (05): : 1502 - 1523

[7] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) : 278 - +

[8] OXIDE THICKNESS DEPENDENCE OF ELECTRON-INDUCED SURFACE STATES IN MOS STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1975, 27 (11) : 615 - 617

[9] ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5654 - &

[10] AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SIO2 [J]. APPLIED PHYSICS LETTERS, 1969, 15 (06) : 174 - +

[1] TRAP IONIZATION BY ELECTRON-IMPACT IN AMORPHOUS SIO2-FILMS [J]. APPLIED PHYSICS LETTERS, 1974, 24 (10) : 459 - 461

[2] THEORY AND EXPERIMENTS ON SURFACE 1/F NOISE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (02) : 273 - +

[3] GOETZBERGER A, 1966, APPL PHYS LETT, V12

[4] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &

[5] ELECTRON INJECTION AND TRAP FILLING IN INSULATING LAYERS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 36 (02): : 705 - 715

[6] CASCADE CAPTURE OF ELECTRONS IN SOLIDS [J]. PHYSICAL REVIEW, 1960, 119 (05): : 1502 - 1523

[7] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) : 278 - +

[8] OXIDE THICKNESS DEPENDENCE OF ELECTRON-INDUCED SURFACE STATES IN MOS STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1975, 27 (11) : 615 - 617

[9] ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5654 - &

[10] AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SIO2 [J]. APPLIED PHYSICS LETTERS, 1969, 15 (06) : 174 - +