NEW INSIGHTS ON THE EFFECT OF HYDROGEN TO TUNGSTEN HEXAFLUORIDE PARTIAL-PRESSURE RATIO ON PLASMA DEPOSITED TUNGSTEN THIN-FILMS

被引：11

作者：

KIM, YT ^{[1
]}

HONG, JS ^{[1
]}

MIN, SK ^{[1
]}

机构：

[1] DONG GUK UNIV,DEPT PHYS,SEOUL,SOUTH KOREA

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 24期

关键词：

D O I：

10.1063/1.105763

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Resistivities of tungsten thin films deposited by plasma enhanced chemical vapor deposition are very sensitive to the H-2/WF6 partial pressure ratio, while the resistivities of tungsten films deposited by low pressure chemical vapor deposition are insensitive to the H-2/WF6 ratio. The reason is investigated with x-ray diffraction, transmission electron microscopy, Auger electron spectroscopy and optical emission spectroscopy. As a result, when the H-2/WF6 partial pressure ratio is higher than 15, plasma deposited tungsten has a low resistive (11-mu-OMEGA cm) bcc structure without F impurities. However, if the H-2/WF6 ratios are decreased, porous and beta-phase W films are formed due to the incomplete reduction of F concentrations.

引用

页码：3136 / 3138

页数：3

共 10 条

[1] A MECHANISM FOR SELECTIVITY LOSS DURING TUNGSTEN CVD [J].