PREPARATION OF ZNSE-ZNTE HETEROJUNCTIONS BY LIQUID-PHASE EPITAXIAL-GROWTH

被引:17
作者
FUJITA, S [1 ]
MORIAI, F [1 ]
ARAI, S [1 ]
SAKAGUCHI, T [1 ]
机构
[1] KYOTO UNIV, FAC ENGN, DEPT ELECT ENGN, KYOTO, JAPAN
关键词
D O I
10.1143/JJAP.12.1841
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1841 / 1849
页数:9
相关论文
共 20 条
[2]   EPITAXIAL GROWTH AND PROPERTIES OF ZNTE-CDS HETEROJUNCTIONS [J].
AVEN, M ;
GARWACKI, W .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) :401-407
[3]   PURIFICATION OF II-VI-COMPOUNDS BY SOLVENT EXTRACTION [J].
AVEN, M ;
WOODBURY, HH .
APPLIED PHYSICS LETTERS, 1962, 1 (03) :53-54
[4]   THE PHASE DIAGRAM OF ZINC TELLURIDE [J].
CARIDES, J ;
FISCHER, AG .
SOLID STATE COMMUNICATIONS, 1964, 2 (08) :217-218
[5]  
DUBENSKII KK, 1970, SOV PHYS SEMICOND+, V4, P845
[6]  
FISCHER AG, 1966, AF196283866 CONTR
[7]   EPITAXIAL SOLUTION GROWTH OF ZNTE ON ZNSE [J].
FUJITA, S ;
ITOH, K ;
ARAI, S ;
SAKAGUCHI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (04) :516-+
[8]  
KOT MV, 1965, FIZ TVERD TELA+, V7, P1001
[9]   ANOMALOUS VARIATION OF BAND GAP WITH COMPOSITION IN ZINC SULFO-TELLURIDES AND SELENO-TELLURIDES [J].
LARACH, S ;
SHRADER, RE ;
STOCKER, CF .
PHYSICAL REVIEW, 1957, 108 (03) :587-589
[10]   PHOTOELECTRONIC PROPERTIES OF GRADED COMPOSITION CRYSTALS OF II-VI SEMICONDUCTORS [J].
LAUER, RB ;
WILLIAMS, F .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) :2904-&