A 2-DIMENSIONAL MATHEMATICAL ANALYSIS OF DIFFUSED SEMICONDUCTOR RESISTOR

被引：24

作者：

KENNEDY, DP

MURLEY, PC

机构：

来源：

关键词：

D O I：

10.1147/rd.123.0242

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：242 / +

页数：1

共 26 条

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[4] CURRENT GAIN AT L-H JUNCTIONS IN GERMANIUM
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GIBSON, AF
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[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (07): : 705 - 711
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