PROPERTIES OF GA1-XINXN FILMS PREPARED BY MOVPE

[1] EFFICIENT INJECTION MECHANISM FOR ELECTROLUMINESCENCE IN GAN [J]. APPLIED PHYSICS LETTERS, 1977, 30 (08) : 412 - 414

[2] GAN BLUE-LIGHT EMITTING DIODES PREPARED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (08) : 2367 - 2368

[3] VIOLET LUMINESCENCE OF MG-DOPED GAN [J]. APPLIED PHYSICS LETTERS, 1973, 22 (06) : 303 - 305

[4] Nagatomo T., 1988, Transactions of the Institute of Electronics, Information and Communication Engineers E, VE71, P292

[5] PREPARATION AND OPTICAL-PROPERTIES OF GA1-XINXN THIN-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) : 3432 - 3437

[6] FUNDAMENTAL ABSORPTION-EDGE IN GAN, INN AND THEIR ALLOYS [J]. SOLID STATE COMMUNICATIONS, 1972, 11 (05) : 617 - &

[1] EFFICIENT INJECTION MECHANISM FOR ELECTROLUMINESCENCE IN GAN [J]. APPLIED PHYSICS LETTERS, 1977, 30 (08) : 412 - 414

[2] GAN BLUE-LIGHT EMITTING DIODES PREPARED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (08) : 2367 - 2368

[3] VIOLET LUMINESCENCE OF MG-DOPED GAN [J]. APPLIED PHYSICS LETTERS, 1973, 22 (06) : 303 - 305

[4] Nagatomo T., 1988, Transactions of the Institute of Electronics, Information and Communication Engineers E, VE71, P292

[5] PREPARATION AND OPTICAL-PROPERTIES OF GA1-XINXN THIN-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) : 3432 - 3437

[6] FUNDAMENTAL ABSORPTION-EDGE IN GAN, INN AND THEIR ALLOYS [J]. SOLID STATE COMMUNICATIONS, 1972, 11 (05) : 617 - &