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HIGH-FIELD MAGNETORESISTANCE AND DEHAAS-VANALPHEN EFFECT IN LASN3

被引：16
作者：
UMEHARA, I
NAGAI, N
ONUKI, Y
机构：
[1] Institute of Materials Science, University of Tsukuba, Tsukuba
来源：
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1991年 / 60卷 / 04期
关键词：
LASN3; FERMI SURFACE; MAGNETORESISTANCE; DEHAAS-VANALPHEN EFFECT;
D O I：
10.1143/JPSJ.60.1294
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have measured the magnetoresistance and the de Haas-van Alphen (dHvA) effect in LaSn3. From the results of magnetoresistance, this substance has been confirmed to be an uncompensated metal with open orbits. About fifteen dHvA branches have been observed, which are well explained by the results of the recent band calculation done by Hasegawa and Yamagami.
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页码：1294 / 1299
页数：6
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