OBSERVATION OF A NU=1/2 FRACTIONAL QUANTUM HALL STATE IN A DOUBLE-LAYER ELECTRON-SYSTEM

被引：364

作者：

SUEN, YW

ENGEL, LW

SANTOS, MB

SHAYEGAN, M

TSUI, DC

机构：

[1] Department of Electrical Engineering, Princeton University, Princeton

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.68.1379

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the observation, for the first time, of a fractional quantum Hall state at nu = 1/2 Landau-level filling in a low disorder, double-layer electron system realized in a 680-angstrom-wide GaAs/AlGaAs single quantum well. A nearly vanishing diagonal resistance and a Hall resistance quantized at 2h/e2 to within 0.3% are observed at congruent-to 15 T and congruent-to 26 mK. The activated temperature dependence of the diagonal resistance minimum yields a quasiparticle excitation energy gap of 230 mK.

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页码：1379 / 1382

页数：4

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