Single-Crystal Growth of VO2 by Isothermal Flux-Evaporation

被引：8

作者：

Aramaki, S. ^{[1
]}

Roy, R. ^{[1
]}

机构：

[1] Penn State Univ, Mat Res Lab, University Pk, PA 16802 USA

来源：

JOURNAL OF MATERIALS SCIENCE | 1968年 / 3卷 / 06期

关键词：

D O I：

10.1007/BF00757912

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Single crystals up to 1 cm x 5 mm x 5 mm of VO2 have been grown by utilisation of the isothermal flux-evaporation principle. The "flux" used is V2O5 which results in the formation of a low-melting eutectic with a composition between V2O5 and VO2. Best growth was achieved at 1210 degrees C at a pO(2) of 10(-3.8), yielding crystals up to 2 x 2 x 0.5 cm. The formation of a new oxy-carbonate of vanadium is reported and serves as an illustration of the dangers involved in contamination from "controlled atmospheres".

引用

页码：643 / 645

页数：3