MEASUREMENT OF THE POLARIZATION OF CHANNELING RADIATION FROM 65 MEV ELECTRONS IN SILICON

被引：6

作者：

DIEDRICH, E ^{[1
]}

BUSCHHORN, G ^{[1
]}

KUFNER, W ^{[1
]}

RZEPKA, M ^{[1
]}

GENZ, H ^{[1
]}

GRAF, HD ^{[1
]}

HOFFMANNSTASCHECK, P ^{[1
]}

RICHTER, A ^{[1
]}

机构：

[1] TH DARMSTADT,INST KERNPHYS,W-6100 DARMSTADT,GERMANY

来源：

PHYSICS LETTERS A | 1993年 / 178卷 / 3-4期

关键词：

D O I：

10.1016/0375-9601(93)91111-H

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

At the new superconducting electron linear accelerator S-DALINAC polarization of channeling radiation from 65 MeV electrons in silicon has been measured for transitions between discrete transversal bound states for the first time. Using a Compton-polarimeter the linear polarization was determined for the (100) and the (110) plane. Within errors the channeling radiation is completely polarized in agreement with theoretical expectation.

引用

页码：331 / 334

页数：4

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