EMISSION CHARACTERISTICS OF METAL-OXIDE SEMICONDUCTOR ELECTRON-TUNNELING CATHODE

被引：68

作者：

YOKOO, K

TANAKA, H

SATO, S

MUROTA, J

ONO, S

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 02期

关键词：

D O I：

10.1116/1.586877

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated a metal-oxide-semiconductor (MOS) electron tunneling cathode with ultrathin SiO2 and examined the emission characteristics. We found that the emission occurred from an entire gate area by electron tunneling through the potential barrier in the MOS diode and the emission current was 0.7% of the total current flowing through the diode. The emission was also found to be nearly independent of pressure.

引用

页码：429 / 432

页数：4