HIGH-EFFICIENCY ENERGY UP-CONVERSION AT GAAS-GAINP2 INTERFACES

被引：61

作者：

DRIESSEN, FAJM ^{[1
]}

机构：

[1] UNIV NIJMEGEN,INST MAT RES,DEPT EXPTL SOLID STATE PHYS,6525 ED NIJMEGEN,NETHERLANDS

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 19期

关键词：

D O I：

10.1063/1.114793

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Luminescence far above the excitation energy is observed at GaAs-GaInP2 interfaces. The intensity of this up-converted signal varies superlinearly with excitation density. Up-converted photoluminescence excitation spectroscopy shows that the signal disappears if the excitation energy is tuned below the GaAs band gap. It is concluded that cold Auger processes and the presence of metastable states in the GaInP2, induced by residual CuPt ordering, cause this nonlinear effect at these type I interfaces. (C) 1995 American Institute of Physics.

引用

页码：2813 / 2815

页数：3