DENSITY, DIFFERENTIAL THERMAL-ANALYSIS AND DIRECT-CURRENT CONDUCTIVITY OF SB10S90-XGEX CHALCOGENIDE GLASSES

被引:7
作者
ELHAMALAWY, AA [1 ]
ELZAIDIA, MM [1 ]
AMMAR, AA [1 ]
ELKHOLY, MM [1 ]
机构
[1] MENOUFIA UNIV,FAC ELECTR ENGN,MENOUFIA,EGYPT
关键词
D O I
10.1007/BF01198945
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The glass-transition temperature, T(g), and the crystallization temperature, T(c) for glassy Sb10S90-xGex samples were increased by increasing the Ge content. This was attributed to the closeness of the network by bridging Sb and/or S atoms with additional Ge atoms to form harder Ge-Sb and/or Ge-S bonds. The direct current (d.c.) electrical conductivity for the system Sb10S90-xGex shows semiconducting behaviour with increasing temperature. At low temperatures, the conductivity was attributed to a hopping conduction mechanism, while at high temperatures it was due to regular band-type conduction, The activation energy, DELTAE(sigma) and the conductivity, sigma(O) were increased at low Ge contents. This may be related to the entrance of Ge atoms into the S-S chains. On the other hand, the increase of the Ge content above 20 at % lead to a conversion of the behaviour of the DELTAE(sigma) and sigma(O) from the insulating character of S to the semiconducting character of Ge.
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页码:147 / 152
页数:6
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