SURFACE STOICHIOMETRY DETERMINATION USING REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION AND ATOMIC-LAYER EPITAXY - THE CASE OF ZNTE(100)

Using reflection high-energy electron diffraction analysis of the relaxation process in highly strained heterostructures grown by atomic-layer epitaxy, a method is proposed to provide a quantitative determination of the surface stoichiometry. Applying this method to the case of the ZnTe(100) surface, we have found that a c(2X2) Te-rich reconstruction observed below 240 degrees C involves 1.5 ML of Te atoms. Consistent with this result, we also propose a microscopic model for the growth of ZnTe in atomic-layer epitaxy, and we demonstrate the relationship between growth rate and surface reconstruction.