ZNSE LIGHT-EMITTING-DIODES

被引：103

作者：

REN, J ^{[1
]}

BOWERS, KA ^{[1
]}

SNEED, B ^{[1
]}

DREIFUS, DL ^{[1
]}

COOK, JW ^{[1
]}

SCHETZINA, JF ^{[1
]}

KOLBAS, RM ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 18期

关键词：

D O I：

10.1063/1.104006

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the successful fabrication of ZnSe p-n junction light-emitting diodes in which Li and Cl are used as p-type and n-type dopants, respectively.

引用

页码：1901 / 1903

页数：3

共 20 条

[1] ELECTROLUMINESCENCE IN AN OXYGEN-DOPED ZNSE P-N-JUNCTION GROWN BY MOLECULAR-BEAM EPITAXY
AKIMOTO, K
MIYAJIMA, T
MORI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (04): : L531 - L534
[2] PHOTOLUMINESCENCE SPECTRA OF OXYGEN-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY
AKIMOTO, K
MIYAJIMA, T
MORI, Y
[J]. PHYSICAL REVIEW B, 1989, 39 (05) : 3138 - 3144
[3] LOW-TEMPERATURE GROWTH OF ZNSE BY MOLECULAR-BEAM EPITAXY USING CRACKED SELENIUM
CAMMACK, DA
SHAHZAD, K
MARSHALL, T
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (09) : 845 - 847
[4] GROWTH OF P-TYPE ZNSE-LI BY MOLECULAR-BEAM EPITAXY
CHENG, H
DEPUYDT, JM
POTTS, JE
SMITH, TL
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (02) : 147 - 149
[5] CHENG J, 1988, J CRYST GROWTH, V95, P512
[6] A 2-ZONE MOLECULAR-BEAM EPITAXY FURNACE FOR EVAPORATION OF II-VI MATERIALS
COOK, JW
EASON, DB
HARRIS, KA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02): : 196 - 199
[7] DETECTION AND CONTROL OF IMPURITY INCORPORATION IN MBE-GROWN ZNSE
DEPUYDT, JM
SMITH, TL
POTTS, JE
CHENG, H
MOHAPATRA, SK
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 318 - 323
[8] ELECTRICAL CHARACTERIZATION OF P-TYPE ZNSE
DEPUYDT, JM
HAASE, MA
CHENG, H
POTTS, JE
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (11) : 1103 - 1105
[9] HAASE M, 1990, DARPA URI WORKSHOP W
[10] CHARACTERIZATION OF P-TYPE ZNSE
HAASE, MA
CHENG, H
DEPUYDT, JM
POTTS, JE
[J]. JOURNAL OF APPLIED PHYSICS, 1990, 67 (01) : 448 - 452

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