QUANTITATIVE AES METHOD FOR THE STUDY OF A MONOLAYER OVER-GROWTH OF THIN-FILM

被引：21

作者：

TOKUTAKA, H

NISHIMORI, K

TAKASHIMA, K

机构：

[1] Department of Electronics, Faculty of Engineering, Tottori University, Tottori, Koyama

来源：

SURFACE SCIENCE | 1979年 / 86卷 / JUL期

关键词：

D O I：

10.1016/0039-6028(79)90378-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In a monolayer over-growth of a thin film, a theoretical method for constructing a quantitative calibration curve for an AES signal versus deposit film thickness has been developed. The curve can be easily obtained by only measuring secondary electron coefficients from the pure deposit and substrate materials. The method is applied to and compared with thin film growth experiments of Ag on Au and Be on Cu, with acceptable agreement. © 1979.

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页码：54 / 61

页数：8

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