SELECTIVE INALAS/INGAAS MBE GROWTH FOR HIGH-FREQUENCY OEIC APPLICATIONS

Device quality material of InP based HEMTs and MSM photodetectors has been demonstrated by solid source selective MBE growth process. Lattice matched Ino.52Al0.48As/In0.53Ga0.47As/InP HEMTs, fabricated on selective grown areas, have demonstrated a two-dimensional electron sheet charge density of 3.4 X 10(12) cm-2 and a room-temperature electron mobility of 10,200 cm2/V. s. A typical 0.15 mum gate length device exhibits an extrinsic transconductance, g(m), of 900 mS/mm with an extrinsic current gain cut-off frequency of over 170 GHz. From the same MBE wafer, a 0.25 mum feature size photodetector, fabricated on a separately grown MSM epitaxial layer, has achieved a photoresponsivity of 0.38 A/W and a frequency response of up to 50 GHz. These results demonstrate the feasibility of using the selective MBE growth technique to integrate high performance InAlAs/In GaAs/InP microwave and opto-electronic devices for ultra-high frequency OEIC applications.