DIELECTRIC CONSTANT AND MOBILITY OF A DOPED ZERO-GAP SEMICONDUCTOR

被引:40
作者
LIU, L
TOSATTI, E
机构
[1] Department of Physics, Northwestern University, Evanston
[2] Scuola Normale Superiore, Pisa, Italy
[3] Gruppo Nazionale di Struttura della Materia, Sezione di Pisa
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevLett.23.772
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The concentration-dependent static dielectric constant is calculated for degenerate n-type α-Sn. The anomalous enhancement of the low-temperature and low-concentration electron mobility is explained. © 1969 The American Physical Society.
引用
收藏
页码:772 / &
相关论文
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