A SELF-ALIGNED EPROM STRUCTURE WITH SUPERIOR DATA RETENTION

被引：6

作者：

MANOS, P ^{[1
]}

HART, C ^{[1
]}

机构：

[1] MOTOROLA INC,ADV PROD RES & DEV LAB,AUSTIN,TX 78721

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 07期

关键词：

D O I：

10.1109/55.56484

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An improved self-aligned EPROM structure for improving data retention is demonstrated. A nitride cap is deposited prior to poly-metal dielectric, enabling a 100% improvement in discrete EPROM cell data retention over the conventional cell structure. This structure can be easily retrofitted to existing MOS processes. © 1990 IEEE

引用

页码：309 / 311

页数：3