IDENTIFICATION OF RBK1 POTASSIUM CHANNELS IN C6 ASTROCYTOMA-CELLS

被引:27
作者
WANG, SY
CASTLE, NA
WANG, GK
机构
[1] HARVARD UNIV, SCH MED, DEPT ANESTHESIA, BOSTON, MA 02115 USA
[2] BRIGHAM & WOMENS HOSP, BOSTON, MA 02115 USA
关键词
POTASSIUM CHANNEL; DELAYED RECTIFIER; RBK1; ASTROCYTOMA; C6; CELL;
D O I
10.1002/glia.440050209
中图分类号
Q189 [神经科学];
学科分类号
071006 ;
摘要
Ionic currents in C6 astrocytoma cells were studied using the patch clamp technique under the whole cell configuration. A delayed rectifier K+ current with an amplitude of approximately 1 nA at +50 mV was observed in 86% (92/107) of the cells examined. This K+ current resembled the delayed rectifier present in type-1 and type-2 astrocytes in vitro and could be inhibited by a variety of K+ channel blockers, including TEA (IC50: 0.5 mM), 4-aminopyridine (IC50: 0.2 mM), MCD peptide (IC50: 52 nM), dendrotoxin I (IC50: 9 nM), and charybdotoxin (74% inhibition at 50 nM). Northern blot analysis, cloning of cDNA and subsequent sequencing showed that the C6 cell delayed rectifier K+ channel is equivalent to the RBK1 K+ channel derived from a rat brain cDNA library. The level of RBK1 transcripts in C6 cells was comparable to that reported in rat brain. The C6 delayed rectifier K+ channel is probably a homomeric RBK1 K+ channel judging from its pharmacological properties which are similar to the RBK1 channel expressed in Xenopus oocytes. Some C6 cells also expressed a transiently activated outward K+ current (I(A)). This current was found in less than 50% of the cells and in general contributed no more than 8% of the total outward current. No voltage-dependent inward Na+ or Ca2+ currents or inwardly rectifying K+ currents were observed in over 100 C6 cells examined. The present results show that the dominant voltage gated ionic current in C6 cells is the RBK1 delayed rectifier K+ channel. Since C6 cells express RBK1 mRNA at a level comparable to its rat brain counterpart, these cells may be a valuable system to study the RBK1 channel and its gene expression.
引用
收藏
页码:146 / 153
页数:8
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