A Model and Equivalent Circuit for a Superconducting Flux Flow Transistor

被引：37

作者：

Martens, J. S. ^{[1
]}

Ginley, D. S. ^{[2
]}

Beyer, J. B. ^{[1
]}

Nordman, J. E. ^{[1
]}

Honenwarter, G. K. G. ^{[3
]}

机构：

[1] Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA

[2] Sandia Natl Labs, Org 1144, Albuquerque, NM 87185 USA

[3] HYPRESS Inc, Elsmford, NY USA

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1991年 / 1卷 / 02期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/77.84615

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A three-terminal high-frequency active device made of a single film of a high T, superconductor that is based on the magnetic control of flux flow is presented. The device is composed of parallel weak links with a nearby magnetic control line. A model has been developed that is based on solving the equation of motion of Abrikosov vortices subject to "Lorentz" viscous and pinning forces, as well as magnetic surface barriers. The model has been used to predict device transit time (computed from flux velocity) and device IV curves. The predictions are compared to measured parameters with resulting very good agreement.

引用

页码：95 / 101

页数：7

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