TELLURIUM IMPLANTATION IN GAAS

被引：27

作者：

EISEN, FH

WELCH, BM

MULLER, H

GAMO, K

INADA, T

MAYER, JW

机构：

[1] ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360

[2] CALTECH,PASADENA,CA 91109

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 03期

关键词：

D O I：

10.1016/0038-1101(77)90187-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：219 / 223

页数：5

共 17 条

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[12]

KUSHIRO Y, 1975, ION IMPLANTATION SEM, P47

[13] ANODIC-OXIDATION OF GAAS AS A TECHNIQUE TO EVALUATE ELECTRICAL CARRIER CONCENTRATION PROFILES [J].

MULLER, H ;

EISEN, FH ;

MAYER, JW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (05) :651-655

[14] RESISTIVITY MOBILITY AND IMPURITY LEVELS IN GAAS GE AND SI AT 300 DEGREES K [J].

SZE, SM ;

IRVIN, JC .

SOLID-STATE ELECTRONICS, 1968, 11 (06) :599-&

[15]

TAKAI M, 1973, JAPAN J APPL PHYS, V12, P1296

[16] EVIDENCE FOR SELF-ACTIVATED LUMINESCENCE IN GAAS - GALLIUM VACANCY-DONOR CENTER [J].

WILLIAMS, EW .

PHYSICAL REVIEW, 1968, 168 (03) :922-&

[17] ENHANCEMENT OF DONOR ACTIVITY OF IMPLANTED SELENIUM IN GAAS BY GALLIUM IMPLANTATION [J].

WOODCOCK, JM .

APPLIED PHYSICS LETTERS, 1976, 28 (04) :226-227

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