TEMPERATURE-DEPENDENCE OF EPITAXIAL-GROWTH OF AL ON SI(111) BY CHEMICAL VAPOR-DEPOSITION

Chemical vapor deposition of aluminum films using tri-isobutyl aluminum on Si(111) wafers has been studied from the viewpoint of structural and electrical properties of Al films as a function of substrate temperature (T(s)). The epitaxial relation of Al on Si is found to be very sensitive to T(s), thus changing from Al(100)//Si(111)With Al[110BAR]//Si[112BAR] to Al(111)//(111) with Al[110BAR]//Si[110BAR] around 410-degrees-C in the course of increasing T(s). The epitaxial relation is mainly determined at the initial stage of the deposition, but in some cases the relation changes with increasing film thickness. Above 420-degrees-C, single-crystalline Al(111) is grown on Si(111), which has resistivity as low as the bulk value, high reflectivity, and a very flat surface.