SHAPE OF THE GAINAS/INP MULTIQUANTUM WELL POTENTIAL OBSERVED BY SCANNING TUNNELING MICROSCOPY

被引：14

作者：

KATO, T

OSAKA, F

机构：

[1] Optoelectronics Technology Research Laboratory, Ibaraki, 300-26, 5-5, Tohkodai, Tsukuba

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 9A期

关键词：

SCANNING TUNNELING MICROSCOPY; GAINAS/INP MULTIQUANTUM WELL; MULTIQUANTUM WELL POTENTIAL; HETEROJUNCTION INTERFACE; CLEAVED SURFACE;

D O I：

10.1143/JJAP.30.L1586

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Under an ultrahigh vacuum (UHV) environment, a cross-sectional observation of a non-doped n-Ga0.47In0.53As/InP multiquantum well (MQW) structure was performed using scanning tunneling microscopy (STM). The STM image of the non-doped MQW structure was compared with the STM image of a highly-doped n-GaInAs/InP MQW structure. As a result, it has become clear that the STM images of the MQW structures reflect the shape of the MQW potential which varies with the doping concentration.

引用

页码：L1586 / L1587

页数：2

共 8 条

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