EFFECT OF SI DOPING ON EPITAXIAL LATERAL OVERGROWTH OF GAAS ON GAAS-COATED SI SUBSTRATE

被引：37

作者：

SAKAWA, S

NISHINAGA, T

机构：

[1] Department of Electronic Engineering, The University of Tokyo, Tokyo, 113, 7-3-1 Hongo, Bunkyo-ku

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 3B期

关键词：

GAAS ON SI; EPITAXIAL LATERAL OVERGROWTH; IMPURITY; DISLOCATION; KOH ETCHING;

D O I：

10.1143/JJAP.31.L359

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By adding an impurity, a GaAs(001) facet was successfully formed on the misoriented substrate and epitaxial lateral overgrowth (ELO) of wide area has been achieved. The largest ELO ratio obtained was 15 and in this case, the thickness of the vertical and lateral directions were 10-mu-m and 150-mu-m respectively. Molten KOH etching showed that a dislocation-free region was obtained, except in the region above the seed opening. The width of the dislocated region depends on the growth thickness. To obtain a wide dislocation-free region, it is concluded that the vertical growth rate should be suppressed as compared with the lateral growth rate.

引用

页码：L359 / L361

页数：3