VOLTAGE GAIN IN THE SINGLE-ELECTRON TRANSISTOR

被引:52
作者
ZIMMERLI, G
KAUTZ, RL
MARTINIS, JM
机构
[1] National Institute of Standards and Technology, Boulder
关键词
D O I
10.1063/1.108117
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the first observation of voltage gain in the capacitively coupled single-electron transistor (SET). Using parallel-plate and interdigital geometries for the gate capacitor (C(g) = 1.2 and 0.4 fF) and ultrasmall tunnel junctions with capacitances near 0.2 fF, we find maximum voltage gains of 2.8 and 1.5, respectively, The leakage resistance of the gate is of the order 10(12) OMEGA for the parallel-plate capacitor and greater than 10(18) OMEGA for the interdigital capacitor.
引用
收藏
页码:2616 / 2618
页数:3
相关论文
共 13 条
  • [1] THE CHARGE-EFFECT TRANSISTOR
    AMMAN, M
    MULLEN, K
    BENJACOB, E
    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (01) : 339 - 346
  • [2] AVERIN DV, 1992, NATO ADV SCI I B-PHY, V294, P311
  • [3] AVERIN DV, 1991, MESOSCOPIC PHENOMENA, pCH6
  • [4] OBSERVATION OF SINGLE-ELECTRON CHARGING EFFECTS IN SMALL TUNNEL-JUNCTIONS
    FULTON, TA
    DOLAN, GJ
    [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (01) : 109 - 112
  • [5] DETERMINATION OF COULOMB-BLOCKADE RESISTANCES AND OBSERVATION OF THE TUNNELING OF SINGLE ELECTRONS IN SMALL-TUNNEL-JUNCTION CIRCUITS
    FULTON, TA
    GAMMEL, PL
    DUNKLEBERGER, LN
    [J]. PHYSICAL REVIEW LETTERS, 1991, 67 (22) : 3148 - 3151
  • [6] TUNNELING TIME AND OFFSET CHARGING IN SMALL TUNNEL-JUNCTIONS
    GEERLIGS, LJ
    ANDEREGG, VF
    MOOIJ, JE
    [J]. PHYSICA B, 1990, 165 : 973 - 974
  • [7] KOROTKOV AN, 1992, SPRIN S ELE, V31, P45
  • [8] SINGLE-ELECTRON CHARGING EFFECTS IN ONE-DIMENSIONAL ARRAYS OF ULTRASMALL TUNNEL-JUNCTIONS
    KUZMIN, LS
    DELSING, P
    CLAESON, T
    LIKHAREV, KK
    [J]. PHYSICAL REVIEW LETTERS, 1989, 62 (21) : 2539 - 2542
  • [9] DIRECT OBSERVATION OF MACROSCOPIC CHARGE QUANTIZATION
    LAFARGE, P
    POTHIER, H
    WILLIAMS, ER
    ESTEVE, D
    URBINA, C
    DEVORET, MH
    [J]. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1991, 85 (03): : 327 - 332
  • [10] LAFARGE P, 1992, CR ACAD SCI II, V314, P883