STEPWISE EXCITATION OF LUMINESCENCE IN GAAS

[1] INFRA-RED ABSORPTION IN SEMICONDUCTORS [J]. REPORTS ON PROGRESS IN PHYSICS, 1956, 19 : 107 - 155

[2] GERSHENZON M, PRIVATE COMMUNICATIO

[3] GOLDBERG P, 1966, LUMINESCENCE INOR ED

[4] 2-STAGE OPTICAL EXCITATION IN SULFIDE PHOSPHORS [J]. PHYSICAL REVIEW LETTERS, 1959, 2 (10) : 420 - 421

[5] KELLEY PL, 1966, PHYSICS QUANTUM E ED, P478

[6] LASER-EXCITED PHOTOLUMINESCENCE OF OVERCOMPENSATED P+ GAAS + BAND-FILLING MODEL ( FREQUENCY SHIFT WITH EXCITATION INTENSITY 77 DEGREES K E ) [J]. APPLIED PHYSICS LETTERS, 1964, 5 (09) : 188 - +

[7] Nathan M. I., 1966, PHYSICS QUANTUM ELEC, P478

[8] EFFECT OF DEFECT FIELDS ON OPTICAL ABSORPTION EDGE [J]. PHYSICAL REVIEW, 1963, 130 (03): : 916 - &

[9] ELECTRIC FIELDS OF DEFECTS IN SOLIDS [J]. PHYSICAL REVIEW, 1963, 130 (03): : 914 - &

[10] 2-PHOTON STEPWISE ABSORPTION IN ER3+ DOPED SALTS [J]. APPLIED PHYSICS LETTERS, 1967, 10 (08) : 218 - &

[1] INFRA-RED ABSORPTION IN SEMICONDUCTORS [J]. REPORTS ON PROGRESS IN PHYSICS, 1956, 19 : 107 - 155

[2] GERSHENZON M, PRIVATE COMMUNICATIO

[3] GOLDBERG P, 1966, LUMINESCENCE INOR ED

[4] 2-STAGE OPTICAL EXCITATION IN SULFIDE PHOSPHORS [J]. PHYSICAL REVIEW LETTERS, 1959, 2 (10) : 420 - 421

[5] KELLEY PL, 1966, PHYSICS QUANTUM E ED, P478

[6] LASER-EXCITED PHOTOLUMINESCENCE OF OVERCOMPENSATED P+ GAAS + BAND-FILLING MODEL ( FREQUENCY SHIFT WITH EXCITATION INTENSITY 77 DEGREES K E ) [J]. APPLIED PHYSICS LETTERS, 1964, 5 (09) : 188 - +

[7] Nathan M. I., 1966, PHYSICS QUANTUM ELEC, P478

[8] EFFECT OF DEFECT FIELDS ON OPTICAL ABSORPTION EDGE [J]. PHYSICAL REVIEW, 1963, 130 (03): : 916 - &

[9] ELECTRIC FIELDS OF DEFECTS IN SOLIDS [J]. PHYSICAL REVIEW, 1963, 130 (03): : 914 - &

[10] 2-PHOTON STEPWISE ABSORPTION IN ER3+ DOPED SALTS [J]. APPLIED PHYSICS LETTERS, 1967, 10 (08) : 218 - &