NMR-STUDY ON ELECTRONIC STATES IN PHOSPHORUS DOPED SILICON

被引:43
作者
KOBAYASHI, SI
FUKAGAWA, Y
IKEHATA, S
SASAKI, W
机构
关键词
D O I
10.1143/JPSJ.45.1276
中图分类号
O4 [物理学];
学科分类号
0702 ;
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页码:1276 / 1281
页数:6
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