PRESSURE-DRIVEN SEMICONDUCTOR-METAL TRANSITION IN INTERMEDIATE-VALENCE TMSE1-XTEX AND THE CONCEPT OF AN EXCITONIC INSULATOR

被引：83

作者：

NEUENSCHWANDER, J ^{[1
]}

WACHTER, P ^{[1
]}

机构：

[1] SWISS FED INST TECHNOL, FESTKORPERPHYS LAB, CH-8093 ZURICH, SWITZERLAND

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.41.12693

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This work studies the pressure-induced semiconductor-to-metal transition (SMT) in the TmSe-TmTe alloy system. This SMT is accompanied by a valence instability of the Tm ions. Single-crystalline semiconducting TmSe1-xTex alloys are investigated under high pressure at low temperatures. Measurements of electrical resistivity, magnetic susceptibility, neutron diffraction, and optical properties are presented and discussed. A very unusual peak structure in the resistivity-pressure relation is observed at low temperatures. A discussion of the novel feature involves the concept of an excitonic insulator and f-d hybridization. The magnetic behavior of the compounds is significantly influenced by the SMT. This is thought to be mainly due to the additional coupling between the magnetic moments of Tm via free carriers which are present in the metallic state. © 1990 The American Physical Society.

引用

页码：12693 / 12709

页数：17

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