NANOSECOND SWITCHING USING POWER MOSFETS

被引：10

作者：

BAKER, RJ ^{[1
]}

POCHA, MD ^{[1
]}

机构：

[1] UNIV CALIF LAWRENCE LIVERMORE NATL LAB,LIVERMORE,CA 94550

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1990年 / 61卷 / 08期

关键词：

D O I：

10.1063/1.1141391

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

It is shown that using the secondary breakdown effect of a bipolar transistor, often called an avalanche transistor, the large input capacitance of a power MOSFET may be charged very quickly. A power MOSFET driven by an avalanche transistor is used to generate electrical pulses of >800 V into 50 Ω with rise times of approximately 3 ns. The output pulse amplitude can be varied by adjusting the drain-source voltage of the power MOSFET. The trigger delay of this circuit is approximately 5 ns, with jitter of <100 ps. This circuit has been used to generate pulses at a repetition rate of greater than 1 kHz.

引用

页码：2211 / 2213

页数：3