共 20 条
[1]
ABAGYAN SA, 1965, FIZ TVERD TELA+, V7, P153
[2]
EFFECT OF TE AND S DONOR LEVELS ON PROPERTIES OF GAAS1-XPX NEAR DIRECT-INDIRECT TRANSITION
[J].
PHYSICAL REVIEW,
1968, 168 (03)
:867-&
[3]
LOW-LEVEL INTERBAND ABSORPTION IN PHOSPHORUS-RICH GALLIUM ARSENIDE-PHOSPHIDE
[J].
PHYSICAL REVIEW,
1969, 181 (03)
:1149-&
[4]
INTRINSIC ABSORPTION-EDGE SPECTRUM OF GALLIUM PHOSPHIDE
[J].
PHYSICAL REVIEW,
1966, 150 (02)
:690-&
[6]
TOWARD A THEORY OF ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS
[J].
PHYSICAL REVIEW,
1968, 175 (03)
:991-&
[7]
Electrical properties of the GaAs X-1C minima at low electric fields from a high-pressure experiment
[J].
PHYSICAL REVIEW B-SOLID STATE,
1970, 2 (10)
:4144-4160
[8]
EVALUATION OF ELECTRONIC ENERGY BAND STRUCTURES OF GAAS AND GAP
[J].
PHYSICA STATUS SOLIDI,
1970, 37 (01)
:11-&
[9]
INTERFERENCE BETWEEN INTERMEDIATE STATES IN OPTICAL PROPERTIES OF NITROGEN-DOPED GALLIUM PHOSPHIDE
[J].
PHYSICAL REVIEW,
1967, 158 (03)
:748-&
[10]
EFFECTS OF HIGH PRESSURE UNIAXIAL STRESS AND TEMPERATURE ON ELECTRICAL RESISTIVITY OF N-GAAS
[J].
PHYSICAL REVIEW,
1967, 155 (03)
:786-&