DEPENDENCE OF TIME OF BREAKDOWN ON ELECTRODE TEMPERATURES IN NITROGEN FILLED DIODES

被引：54

作者：

BOSAN, DA

PEJOVIC, MM

机构：

[1] Faculty of Electronic Engineering, PF73, 18001, NiS

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1979年 / 12卷 / 10期

关键词：

D O I：

10.1088/0022-3727/12/10/011

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Time delays of electrical breakdown in a gas-filled diode (td) were measured as a function of the time between two successive measurements ( tau ) at cathode temperatures of 300K, 523K and 673K. The diode was filled with nitrogen at 4 mbar with an oxygen impurity of about 10 ppm. It is shown that the breakdown time delays at 673K are one order of magnitude smaller than those at 300K.

引用

页码：1699 / 1702

页数：4