FAST 8-KV METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR SWITCH

被引：23

作者：

CONTINETTI, RE

CYR, DR

NEUMARK, DM

机构：

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1992年 / 63卷 / 02期

关键词：

D O I：

10.1063/1.1143294

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A fast high voltage switch based on ten transformer-isolated power metal-oxide semiconductor field-effect transistors in series is described. This circuit can switch 8 kV to ground with a fall time of almost-equal-to 230 ns, and has proven to be useful for beam potential re-referencing in pulsed ion beam experiments.

引用

页码：1840 / 1841

页数：2