ROLE OF BROKEN TRANSLATIONAL INVARIANCE FOR THE OPTICAL-RESPONSE OF EXCITONS IN LOW-DIMENSIONAL SEMICONDUCTORS

被引：8

作者：

BRANDT, O

LAGE, H

LAROCCA, GC

HEBERLE, A

PLOOG, K

机构：

[1] Max-Planck-Institut für Festkörperforschung, W-7000 Stuttgart 80

来源：

SURFACE SCIENCE | 1992年 / 267卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(92)91146-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We manipulate the center-of-mass motion of excitons by introducing fractions of a monolayer of InAs in bulklike GaAs. Deposition of InAs on various terraced surfaces provides the direct experimental control of the lateral extent of the InAs insertion and thus of the exciton motion. The optical response of excitons attached to these InAs insertions is predominantly determined by the dimensionality of their translational motion.

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页码：319 / 322

页数：4

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