A LOW-VOLTAGE, HIGH-REFLECTANCE-CHANGE NORMALLY OFF REFRACTIVE GAAS/AL0.2GA0.8AS MQW REFLECTION MODULATOR

被引：8

作者：

LIN, CH

MEESE, JM

CHANG, YC

机构：

[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES RES LAB,URBANA,IL 61801

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1994年 / 30卷 / 05期

关键词：

D O I：

10.1109/3.303686

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present our optimization of a normally off refractive GaAs/AlxGa1-xAs multiple-quantum-well (MQW) reflection modulator with respect to the ON/OFF reflectance change, ON/OFF contrast ratio, and operating voltage. We use optical transfer matrices, theoretically calculated refractive indices, and absorption coefficients to simulate the operation of a normal-incident Fabry-Perot MQW modulator. Our calculations suggest that a normally off refractive GaAs/Al0.2Ga0.8As MQW reflection modulator with a reflectance change of 42.9% and an ON/OFF contrast ratio of 1539 for an operating voltage of only 2.44 V can be fabricated by molecular-beam epitaxy (MBE).

引用

收藏

页码：1234 / 1240

页数：7

相关论文

共 19 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29

[2] REFRACTIVE-INDEX OF GA1-XALXAS [J].

AFROMOWITZ, MA .

SOLID STATE COMMUNICATIONS, 1974, 15 (01) :59-63

[3] ELECTRIC-FIELD INDUCED LOCALIZATION AND OSCILLATORY ELECTRO-OPTICAL PROPERTIES OF SEMICONDUCTOR SUPERLATTICES [J].

BLEUSE, J ;

BASTARD, G ;

VOISIN, P .

PHYSICAL REVIEW LETTERS, 1988, 60 (03) :220-223

[4]

CASEY HC, 1978, HETEROSTRUCTURE LA A, pCH4

[5] ELECTROOPTIC EFFECT IN SEMICONDUCTOR SUPERLATTICES [J].

CHANG, YC ;

SCHULMAN, JN ;

EFRON, U .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (11) :4533-4537

[6] NORMALLY-OFF HIGH-CONTRAST ASYMMETRIC FABRY-PEROT REFLECTION MODULATOR USING WANNIER-STARK LOCALIZATION IN A SUPERLATTICE [J].

LAW, KK ;

YAN, RH ;

MERZ, JL ;

COLDREN, LA .

APPLIED PHYSICS LETTERS, 1990, 56 (19) :1886-1888

[7] LOW-VOLTAGE SUPERLATTICE ASYMMETRIC FABRY-PEROT REFLECTION MODULATOR [J].

LAW, KK ;

COLDREN, LA ;

MERZ, JL .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (04) :324-326

[8] ELECTRODISPERSIVE MULTIPLE QUANTUM WELL MODULATOR [J].

LEE, YH ;

JEWELL, JL ;

WALKER, SJ ;

TU, CW ;

HARBISON, JP ;

FLOREZ, LT .

APPLIED PHYSICS LETTERS, 1988, 53 (18) :1684-1686

[9] A SEMIEMPIRICAL MODEL FOR ELECTROABSORPTION IN GAAS/ALGAAS MULTIPLE QUANTUM-WELL MODULATOR STRUCTURES [J].

LENGYEL, G ;

JELLEY, KW ;

ENGELMANN, RWH .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1990, 26 (02) :296-304

[10] PRESSURE AND COMPOSITIONAL DEPENDENCES OF THE HALL-COEFFICIENT IN ALXGA1-XAS AND THEIR SIGNIFICANCE [J].

LIFSHITZ, N ;

JAYARAMAN, A ;

LOGAN, RA ;

CARD, HC .

PHYSICAL REVIEW B, 1980, 21 (02) :670-678