COMMENTS ON RELATION BETWEEN BAND-GAP ENERGY IN SEMICONDUCTORS AND HEATS OF FORMATION

被引：28

作者：

VIJH, AK

机构：

[1] Research and Development Labs., Sprague Electric Company, North Adams, MA

来源：

关键词：

D O I：

10.1016/0022-3697(68)90021-8

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

[No abstract available]

引用

页码：2233 / &

相关论文

共 19 条

[1]

APKER A, 1952, PHY REV, V88, P58

[2]

BOCKRIS JO, 1964, MODERN ASPECTS EL ED, V3

[3]

CONWAY BE, 1956, J CHEM PHYS, V24, P835

[4]

GATOS HC, 1962, PHYSICS CHEMISTRY CE

[5]

HANNAY NB, 1959, SEMICONDUCTORS ED

[6]

KITTEL C, 1966, INTRODUCTION SOLID S

[7]

KLINGSBERG C, 1962, PHYSICS CHEMISTRY ED

[8]

LANDERS JJ, 1959, SEMICONDUCTORS

[9]

MANCA P, 1958, J PHYS CHEM SOLIDS, V6, P305

[10]

MOELLER T, 1952, INORGANIC CHEMISTRY, P518