共 12 条
[1]
ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS - SURVEY OF BINDING MECHANISMS
[J].
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS,
1971, 4 (14)
:1936-&
[2]
Baldereschi A., 1973, Journal of Luminescence, V7, P79, DOI 10.1016/0022-2313(73)90060-4
[3]
BALSLEV I, 1966, J PHYS SOC JPN, VS 21, P101
[5]
EXTRINSIC ELECTROABSORPTION - N SYMMETRY IN GAP
[J].
PHYSICAL REVIEW LETTERS,
1975, 34 (17)
:1088-1091
[6]
Optical properties of the donor tin in gallium phosphide
[J].
PHYSICAL REVIEW B-SOLID STATE,
1970, 2 (10)
:4062-4076
[7]
Faulkner R. A., 1970, J LUMIN, V1, P552
[9]
EFFECT OF UNIAXIAL STRESS ON BINDING TO ISOELECTRONIC IMPURITIES IN GAP
[J].
PHYSICAL REVIEW B,
1972, 6 (08)
:3082-&
[10]
EFFECT OF UNIAXIAL STRESS ON EXCITONS BOUND TO BISMUTH IN GAP
[J].
PHYSICAL REVIEW B,
1970, 1 (06)
:2592-&