PIEZO-MODULATED SPECTROSCOPIC INVESTIGATION OF N AND N-N PAIRS IN GAP

被引:2
作者
POLLAK, FH
RACCAH, PM
BAUER, RS
BURNHAM, RD
机构
[1] YESHIVA UNIV,BELFER GRAD SCH SCI,NEW YORK,NY 10033
[2] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
来源
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS | 1977年 / 39卷 / 02期
关键词
D O I
10.1007/BF02725772
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:437 / 441
页数:5
相关论文
共 12 条
[1]   ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS - SURVEY OF BINDING MECHANISMS [J].
ALLEN, JW .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (14) :1936-&
[2]  
Baldereschi A., 1973, Journal of Luminescence, V7, P79, DOI 10.1016/0022-2313(73)90060-4
[3]  
BALSLEV I, 1966, J PHYS SOC JPN, VS 21, P101
[4]   CORRECTION [J].
BAUER, RS .
PHYSICAL REVIEW LETTERS, 1975, 34 (24) :1540-1540
[5]   EXTRINSIC ELECTROABSORPTION - N SYMMETRY IN GAP [J].
BAUER, RS ;
BURNHAM, RD .
PHYSICAL REVIEW LETTERS, 1975, 34 (17) :1088-1091
[6]   Optical properties of the donor tin in gallium phosphide [J].
Dean, P. J. ;
Faulkner, R. A. ;
Kimura, S. .
PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10) :4062-4076
[7]  
Faulkner R. A., 1970, J LUMIN, V1, P552
[8]   DIRECT STUDY OF NATURE OF NITROGEN BOUND-STATES IN GAAS1-XPX-N [J].
KLEIMAN, GG ;
NELSON, RJ ;
HOLONYAK, N ;
COLEMAN, JJ .
PHYSICAL REVIEW LETTERS, 1976, 37 (06) :375-378
[9]   EFFECT OF UNIAXIAL STRESS ON BINDING TO ISOELECTRONIC IMPURITIES IN GAP [J].
MERZ, JL ;
SERGENT, AM ;
BALDERES.A .
PHYSICAL REVIEW B, 1972, 6 (08) :3082-&
[10]   EFFECT OF UNIAXIAL STRESS ON EXCITONS BOUND TO BISMUTH IN GAP [J].
ONTON, A ;
MORGAN, TN .
PHYSICAL REVIEW B, 1970, 1 (06) :2592-&