THERMALLY INDUCED IN/GA INTERDIFFUSION IN INXGA1-XAS/GAAS STRAINED SINGLE QUANTUM WELL GROWN BY LPMOVPE

被引：18

作者：

IIKAWA, F

MOTISUKE, P

BRUM, JA

SACILOTTI, MA

ROTH, AP

MASUT, RA

机构：

[1] CPQD,TELEBRAS,BR-13100 CAMPINAS,SP,BRAZIL

[2] NATL RES COUNCIL CANADA,DIV PHYS,OTTAWA K1A 0R6,ONTARIO,CANADA

[3] ECOLE POLYTECH,DEPT GENIE PHYS,MONTREAL H3C 3A7,QUEBEC,CANADA

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(88)90549-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Semiconducting Gallium Arsenide

引用

页码：336 / 341

页数：6

共 28 条

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