CONTROL OF PREFERENTIAL ORIENTATION BY INSITU PLASMA SUPPLY DURING GROWTH OF POLYCRYSTALLINE SILICON FILMS

被引：8

作者：

HASEGAWA, S

YAMAMOTO, S

KURATA, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 02期

关键词：

D O I：

10.1063/1.102126

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：142 / 144

页数：3

共 8 条

[1] STRUCTURE AND CRYSTAL-GROWTH OF ATMOSPHERIC AND LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED SILICON FILMS [J].

BISARO, R ;

MAGARINO, J ;

PROUST, N ;

ZELLAMA, K .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) :1167-1178

[2] STRUCTURAL AND ELECTRICAL-PROPERTIES OF P-DOPED AND B-DOPED POLYCRYSTALLINE SILICON BY PLASMA-ENHANCED CVD AT 700-DEGREES-C [J].

HASEGAWA, S ;

MORITA, M ;

KURATA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (04) :L522-L524

[3] EFFECTS OF INSITU PLASMA SUPPLY IN UNDOPED AND BORON-DOPED POLYCRYSTALLINE SILICON BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION AT 500-840-DEGREES-C [J].

HASEGAWA, S ;

MORITA, M ;

KURATA, Y .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (08) :4154-4160

[4] ELECTRON-SPIN-RESONANCE AND ELECTRICAL-PROPERTIES OF P-DOPED MICROCRYSTALLINE SI [J].

HASEGAWA, S ;

NARIKAWA, S ;

KURATA, Y .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 48 (05) :431-447

[5] THE EFFECT OF LOW-PRESSURE ON THE STRUCTURE OF LPCVD POLYCRYSTALLINE SILICON FILMS [J].

JOUBERT, P ;

LOISEL, B ;

CHOUAN, Y ;

HAJI, L .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (10) :2541-2545

[6] STRUCTURE AND PROPERTIES OF LPCVD SILICON FILMS [J].

KAMINS, TI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) :686-690

[7] POLYCRYSTALLINE SI THIN-FILM TRANSISTORS FABRICATED AT LESS-THAN-OR-EQUAL-TO-800-DEGREES-C - EFFECTS OF GRAIN-SIZE AND (110) FIBER TEXTURE [J].

KUNG, KTY ;

REIF, R .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (04) :1503-1509

[8] SURFACE EFFECT AS A LIMITATION ON THE PERFORMANCE OF POLYCRYSTALLINE SI THIN-FILM TRANSISTORS [J].

KUNG, KTY ;

REIF, R .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (06) :2131-2135

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