ELECTRONIC-STRUCTURE OF DISORDERED OVERLAYERS ON METAL SUBSTRATES

被引：19

作者：

KUDRNOVSKY, J ^{[1
]}

WENZIEN, B ^{[1
]}

DRCHAL, V ^{[1
]}

WEINBERGER, P ^{[1
]}

机构：

[1] CZECHOSLOVAK ACAD SCI, INST PHYS, CS-11142 PRAGUE 1, CZECHOSLOVAKIA

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.44.4068

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic structure of a random overlayer on a nonrandom substrate, both consisting of transition-metal atoms, is determined theoretically by employing (i) the first-principles tight-binding linear-muffin-tin-orbital method to describe the band structure, (ii) the surface Green's function to treat the layered nature of the problem, and (iii) the coherent-potential approximation to include the influence of disorder in the overlayer. As an application we determine k parallel-to-resolved as well as k parallel-to-integrated layer-projected densities of states for the first few layers of an Ag(001) substrate coated with an overlayer of random Ag75Pd25.

引用

页码：4068 / 4071

页数：4

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