INITIAL-STAGES OF THE GROWTH OF FE ON SI(111)7X7

被引：98

作者：

ALVAREZ, J

DEPARGA, ALV

HINAREJOS, JJ

DELAFIGUERA, J

MICHEL, EG

OCAL, C

MIRANDA, R

机构：

[1] Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.47.16048

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a multitechnique (scanning tunneling microscopy, photoelectron spectroscopy, and ion scattering spectroscopy) approach to study the formation of the Fe/Si(111) interface at room temperature. The first-deposited Fe atoms react with the surface, displacing Si atoms from their positions. The result is an amorphous layer with composition and density of states close to those of FeSi. On top of this reacted layer, crystallites of Fe with interdiffused Si grow. Upon further Fe deposition, the crystallite composition evolves to pure Fe.

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页码：16048 / 16051

页数：4

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